Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Unaxis ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Unaxis ICPPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | Wafer auto load/unload |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Unaxis ICP |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | Wafer auto load/unload[2] |
| Configuration | — | Gas Box:[2] |
| Gas 1 | — | UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[2] |
| Gas 2 | — | MKS 1479, HBr, 100 sccm, +/- 3% accuracy[2] |
| Gas 3 | — | MKS 1479, SF6, 100 sccm, +/- 3% accuracy[2] |
| Gas 4 | — | UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[2] |
| Gas 5 | — | MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[2] |
| Gas 6 | — | MKS 1479, He, 20 sccm 3%, +/-3% accuracy[2] |
| Gas 7 | — | UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[2] |
| Gas 8 | — | MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[2] |
| Temperature | — | Watlow 988 Chamber Chuck Temperature Control: (20-300°C) +/- 1°C[2] |
| Generator | — | ENI ACG 6 B[2] |
| Pressure Control Range | — | 100 mTorr[2] |
| VAT Valve Control | — | PM 5[2] |
| Turbo Pump Limit Vacuum | — | 5.0 E-6 Torr[2] |
| Tool type | — | Inductively Coupled Plasma (ICP) etcher[2] |
| Wafer sizes | — | 2, 3, 4, 6, 8 inch[2] |
| Chamber | — | Wafer auto load/unload[2] |
| Chamber chuck temperature control | — | Watlow 988, 20-300°C, +/- 1°C[2] |
| RF system generator | — | ENI ACG 6 B[2] |
| Pressure gauge | — | MKS 627 vacuum gauge[2] |
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