Waferpedia

Comparison ledger

Aspen II ICP LEversus100 ICP Fluorine

Mattson Aspen II ICP LE, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMMattsonOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyMattson Aspen II ICP LEOxford Instruments 100 ICP Fluorine
Specifications
Wafer Size8 inch[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu