Waferpedia

Comparison ledger

EDC-HL-8versusWS-650-8

Laurell EDC-HL-8, Laurell WS-650-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EDC-HL-8Laurell
WS-650-8Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLaurell EDC-HL-8Laurell WS-650-8
Cited variants
Specifications
Series650-series EDC system[1]650-series[2]
Maximum wafer sizeup to 200 mm[1]—
Maximum substrate size7 in × 7 in (178 mm × 178 mm)[1]—
Maximum speed capability12,000 RPM with vacuum hold-down[1]—
Recommended speed3,000 RPM with non-vacuum chucks[1]—
Power95 to 240 VAC, 47/63 HZ, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
Nitrogen/CDA pressure60–70 PSIG (4–5 bar)[1]—
Vacuum requirement25–28 inches Hg; 4.5 SCFM at 0 inches Hg[1]—
Product type—Spin coater[2]
Wafer capacity—Up to 200 mm wafers[2]
Substrate capacity—Up to 7 in x 7 in (178 mm x 178 mm) substrates[2]
Maximum rotational speed—12,000 RPM[2]
Basis for max speed rating—Based on a 100 mm silicon wafer[2]
Process controller—650-series process controller with robust microprocessor and accompanying PC software[2]
Power requirement—95 to 240 VAC, 47/63 Hz, approximately 300 W[2]
Nitrogen/CDA process/seal purge—60 to 70 PSIG (4 to 5 bar)[2]
Vacuum suggestion—25 to 28 inches Hg; 4.5 SCFM at 0 inches Hg[2]
Applications—Coating, etching, developing, rinsing-drying, and cleaning[2]
Model—WS-650-8B[2]
Category—Spin coater[2]
Speed reference condition—Based on a 100mm silicon wafer[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org