Waferpedia

Comparison ledger

12 Lapperversus6 EC

Lapmaster 12 Lapper, Strasbaugh 6 EC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
12 LapperLapmaster
6 ECStrasbaugh
OEMLapmasterStrasbaugh
CategoryCMPCMP
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Strasbaugh 6 EC
Specifications
Outside plate diameter12 inches[1]—
Lapping Speed Range0 to 60 rpm[2]—
Wafer Size Compatibility4 inches or smaller[1]—
Input Voltage110 V[1]—
Frequency60 Hz[1]50/60 Hz[3]
Phase1[1]3 Phase[3]
Number of Rings3[1]—
Number of Weights3[1]—
Includes Slurry SystemYes[1]—
Includes TimerYes[1]—
Configuration—50/60 Hz[3]
Voltage—208 V[3]
Full Load—30 A[3]
Wafer size (inch)—3, 4[4]
Wafer size (mm)—100[5]
Input voltage—208 V[3]
Full load current—30 A[3]
Motor amps—13.6 A[3]
Conditioning arm sweep zones—10[6]
Pad conditioning zones—20[7]
Control interface—Color touch-screen GUI[7]
Carrier type—ViPRR[7]
Load station—Hydro-Lift[7]
Table and spindle motor control—Closed-loop RPM[7]
Pad conditioning type—In-situ and ex-situ[7]
Typical applications—Si and SiO2 polishing and planarizing[5]
Asset / model—Strasbaugh 6 EC[3]
Power—50/60 Hz, 3 phase, 208 V[3]
Motor current—13.6 motor amps[3]
Wafer size—100 mm[5]
Substrate chucks—3-inch and 4-inch wafers[4]
Functions—Si and SiO2 polishing and planarizing[5]
Programmable controls—fully programmable sweep, downpressure, table speed, time, slurry flow[4]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]jmind.comjmind.com
  2. [2]etd.ohiolink.eduetd.ohiolink.edu
  3. [3]inventory listing
  4. [4]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  5. [5]nanofab.utah.edunanofab.utah.edu
  6. [6]cnfusers.cornell.educnfusers.cornell.edu
  7. [7]web.archive.orgweb.archive.org