Comparison ledger
CEE 1000 Hot Plate, KLA 8100 Electronic Source, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | CEE | KLA |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 1000 Hot Plate | KLA 8100 |
| Specifications | ||
| Configuration | 4"[1] | Refurbished[2] |
| Type | Hot Plate[1] | — |
| Wafer Size | 4 inch[1] | — |
| Base pressure post bake | — | 3.20 E-10 Torr[2] |
| Filament current | — | 2330 mA[2] |
| Temperature at current | — | 1800 Kelvin[2] |
| Extraction voltage | — | 3000 V[2] |
| Extraction current | — | 105 uA[2] |
| Emitter radius | — | 0.36 µm[2] |
| Distance tip protrudes from the suppressor | — | 250 um[2] |
| Emitter chamber base pressure | — | <2*10-9 mbar[2] |
| Maximum emitter operating pressure | — | <5*10-9 mbar[2] |
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