Comparison ledger
Axcelis NV GSD 200 Ion, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD 200 IonAxcelis | |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | 150mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Varian 0216 7696, E 11368072 ESC |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Voltage | 208V, 710A[1] | — |
| Gases | B/As/Ar[1] | — |
| Total energy | 200 KEV[1] | — |
| Throughput | 210 pieces/hour[1] | — |
| Configuration | Features:[1] | Platen ADV-S Type[2] |
| Wafer size | 6 inch[1] | — |
| Power | 3 Phase, 208V, 710A[1] | — |
| Process gases | B/As/Ar[1] | — |
| SDS gas lines | 2 lines (ASH3 and PH3)[1] | — |
| HP gas lines | 2 lines (BF3 and ARGON)[1] | — |
| Cassette | 25 slots, 4 cassettes capacity[1] | — |
| Source head | ELS source head[1] | — |
| Control hardware | 2 SUN Workstations, VME 177 cell controller[1] | — |
| Post acceleration high voltage | 80 KEV[1] | — |
| Drive | Belt type rotary drive[1] | — |
| Implant angle | Variable, 2-axis[1] | — |
| Dose controller | Real-time patented dose controller[1] | — |
| Dose range | 5E11~1E16 Ions/cm2[1] | — |
| Arm | Std Arm 150mm[1] | — |
| Wafer holder | Std 150mm[1] | — |
| Beam energy | 5 KeV[1] | — |
| Beam current | 50 mA[1] | — |
| Electron shower | P-Shower electron shower[1] | — |
| CE marking | CE marked[1] | — |
| Beam Current | 50 mACE marked[1] | — |
| Type | — | ESC Platen ADV-S Type[2] |
| Category | — | Ion Implantation[3] |
Plan your fab
Building a Ion Implantation process? Get a complete equipment list.
Open the fab equipment planner →