Comparison ledger
ASM E 2000 Epitaxial Reactor, Denton Vacuum 635LL, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 635LLDenton Vacuum | |
|---|---|---|
| OEM | ASM | Denton Vacuum |
| Category | Deposition | Deposition |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASM E 2000 Epitaxial Reactor | Denton Vacuum 635LL |
| Cited variants | — | |
| Specifications | ||
| Supply Voltage/ Freq | 480/ 50[3] | — |
| System Hand | Left Hand[3] | — |
| Monitor Type | Flat Panel[3] | — |
| Maint Console | Mini Maint[3] | — |
| CPU | 68040[3] | — |
| Software Version | 7.65[3] | — |
| Comms | HSMS[3] | — |
| RP/ ATM | RP[3] | — |
| Vacuum Load Locks | No[3] | — |
| WHC Gate Valve | Swing[3] | — |
| WHC Robot Arm | Wide[3] | — |
| Reactor Isolation | HVA[3] | — |
| ATM Valve | VAT[3] | — |
| Pressure Controller | MKS 152 Analogue[3] | — |
| PCV Type | MKS 253B[3] | — |
| Choke Valve | Yes[3] | — |
| RP Orientation | Bottom Feed[3] | — |
| Gas Panel Orientation | Top Feed[3] | — |
| Main H2/N2 | 100slm[3] | — |
| Cross Purge Valves | Yes[3] | — |
| Wafer Size | 200mm[4] | — |
| Supply Voltage / Freq | 480 / 50[1] | — |
| Configuration | RP[1] | — |
| HCL Hi | 20slm[6] | — |
| Supply Voltage / Frequency | 480 V / 50 Hz[3] | — |
| Maintenance Console | Mini Maint[3] | — |
| Communications | HSMS[3] | — |
| Main H2/N2 Flow | 100 slm[3] | — |
| Shaft MFC | 5 slm[3] | — |
| P Dopant Loop | Yes[3] | — |
| N Dopant Loop | Yes, Teed PH3/AsH3[3] | — |
| Aux1 Gas (SiH2Cl2) | 500 sccm[3] | — |
| Aux2 Gas (SiH4) | 105 sccm[3] | — |
| HCL High | 20 slm (some 30 slm)[3] | — |
| HCl Low | 2000 sccm (some 1000 sccm, 500 sccm)[3] | — |
| TCS | 25 gpm LVC[3] | — |
| DCS Cabinet | Yes[3] | — |
| TCS Mini Bubbler | 10L LPE[3] | — |
| Gas Detection | Gastec H2/HCl[3] | — |
| Temperature Controller | Foxboro[3] | — |
| Analog Ratio Control | Yes[3] | — |
| Wafer Size Kits Available | 100 mm, 150 mm, 200 mm[1] | — |
| Unit Vintage (example unit) | 2001[1] | — |
| OEM | ASM[4] | — |
| Model | E 2000[4] | — |
| Equipment name | ASM E 2000 Epitaxial Reactor[4] | — |
| Category | Deposition[4] | — |
| Wafer sizes | 8 inch[4] | — |
| Supply voltage / frequency | 480 / 50[4] | — |
| Dep/Vent transition valves | Yes[4] | — |
| ATM/RP vent | Yes[4] | — |
| P loop MFCs Dil/SRC/INJ | 20slm/175/175[4] | — |
| N loop MFCs Dil/SRC/INJ | 20slm/175/175[4] | — |
| Aux1 | SiH2Cl2 500sccm[4] | — |
| Aux2 | SiH4 105sccm[4] | — |
| Aux3 | None[4] | — |
| Aux4 | GeH4 2000sccm[4] | — |
| Aux5 | GeH4 175sccm[4] | — |
| HCl Hi | Yes 20slm[4] | — |
| Precision vent matching | Yes[4] | — |
| Cathodes | — | 4-cathodes[7] |
| Gas / process feedback | — | RGA, OES-feedback reactive oxygen or nitrogen sputter[7] |
| Chuck temperature | — | heated/cooled chuck to 500C[7] |
| Process mode | — | co-sputtering[7] |
| Substrate size | — | coats up to 200mm diameter substrates[7] |
| Number of cathodes | — | 4[8] |
| Residual gas analysis (RGA) | — | Included[8] |
| Reactive sputtering feedback | — | OES-feedback reactive oxygen or nitrogen sputter[8] |
| Chuck temperature range | — | Heated/cooled to 500 °C[8] |
| Co-sputtering capability | — | Yes[8] |
| Maximum substrate size | — | 200 mm diameter[8] |
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