Comparison ledger
Applied Materials Reflexion, Strasbaugh 6 EC, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ReflexionApplied Materials | 6 ECStrasbaugh |
|---|---|---|
| OEM | Applied Materials | Strasbaugh |
| Category | CMP | CMP |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Reflexion | Strasbaugh 6 EC |
| Cited variants | — | |
| Specifications | ||
| Configuration | Dielectric, LK Oxide[2] | 50/60 Hz[5] |
| Wafer Sizes | 12 inch[2] | — |
| Process Type | Chemical Mechanical Polishing (CMP)[2] | — |
| OEM | Applied Materials[2] | — |
| Model | Reflexion[2] | — |
| Category | CMP (Chemical Mechanical Polisher)[2] | — |
| Wafer Size | 12 inch[2] | — |
| Phase | — | 3 Phase[5] |
| Voltage | — | 208 V[5] |
| Full Load | — | 30 A[5] |
| Wafer size (inch) | — | 3, 4[6] |
| Wafer size (mm) | — | 100[7] |
| Input voltage | — | 208 V[5] |
| Frequency | — | 50/60 Hz[5] |
| Full load current | — | 30 A[5] |
| Motor amps | — | 13.6 A[5] |
| Conditioning arm sweep zones | — | 10[8] |
| Pad conditioning zones | — | 20[9] |
| Control interface | — | Color touch-screen GUI[9] |
| Carrier type | — | ViPRR[9] |
| Load station | — | Hydro-Lift[9] |
| Table and spindle motor control | — | Closed-loop RPM[9] |
| Pad conditioning type | — | In-situ and ex-situ[9] |
| Typical applications | — | Si and SiO2 polishing and planarizing[7] |
| Asset / model | — | Strasbaugh 6 EC[5] |
| Power | — | 50/60 Hz, 3 phase, 208 V[5] |
| Motor current | — | 13.6 motor amps[5] |
| Wafer size | — | 100 mm[7] |
| Substrate chucks | — | 3-inch and 4-inch wafers[6] |
| Functions | — | Si and SiO2 polishing and planarizing[7] |
| Programmable controls | — | fully programmable sweep, downpressure, table speed, time, slurry flow[6] |