Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Plasma-Therm Versaline ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | Versaline ICP Deep SiliconPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Plasma-Therm Versaline ICP |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Phase | — | 208/220 VAC, 3 Phase[3] |
| Configuration | — | 30 A, 4-Wire[3] |
| Process type | — | Inductively coupled plasma etcher[3] |
| Application | — | Deep silicon etch[4] |
| Electrical requirements | — | 208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz[3] |
| Compatible materials | — | Si[4] |
| Incompatible materials | — | III-V / Hi K / Metal[4] |
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