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Comparison ledger

0010-03254 E ChuckversusGasonics L 3510

Applied Materials 0010-03254 E Chuck, Lam Research Gasonics L 3510, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03254 E ChuckApplied Materials
Gasonics L 3510Lam Research
OEMApplied MaterialsLam Research
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Lam Research Gasonics
Specifications
Configuration—With:[1]
Microwave Power—0–1200 watts at 2.45 GHz[2]
Pressure Range—0.5 to >5.0 torr[2]
Platen Temperature—100–300 °C[2]
Ash Rate—Up to 3.5 µm/min (process dependent)[2]
Throughput—45–60 wafers per hour[2]
Within Wafer Uniformity—±5% to 10% (process dependent)[2]
Wafer-to-Wafer Uniformity—±5% to 10% (process dependent)[2]
Process Gases—O₂, N₂ (O₂ 5 SLM, N₂ 1 SLM typical)[2]
Wafer Size—75 mm to 200 mm (3 to 8 inch)[3]
OEM—Lam Research / Gasonics[1]
Model—L 3510[1]
Type—Plasma asher[1]
Process type—Downstream microwave plasma ashing[3]
Wafer size support—75 mm to 200 mm (3 to 8 inch); up to 8 inch capability[3]
Wafer handling—Z-Bot for 6" and 8" wafers[1]
Gas delivery—Accurate 354 C Gas Control System[1]
Vacuum pump—Abara A 70 W Dry Pump[1]
Process gases—O2, N2[3]
Ash rate—Up to 3.5 µm/min[3]
Wafer transfer—Integrated solid robotic wafer transfer[2]
Cassette station—Fixed, more stable[2]
Controller—Allwin21 PC with touch screen monitor[2]
Wafer Size Support—75 mm to 200 mm (3 to 8 inch)[2]
Wafer Handling—Z-Bot for 6" and 8" wafers; integrated solid robotic transfer[1]
Gas Control System—Accurate 354 C Gas Control System[1]
Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]allwin21.comallwin21.com
  3. [3]waferpedia.comwaferpedia.com