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Comparison ledger

0216 7696, E 11368072 ESCversusE 500 High Current

Varian 0216 7696, E 11368072 ESC, Varian E 500 High Current, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyVarian 0216 7696, E 11368072 ESCVarian E 500 High Current
Specifications
ConfigurationPlaten ADV-S Type[1]System Vacuum:[3]
TypeESC Platen ADV-S Type[1]—
CategoryIon Implantation[2]—
Signal Tower—Front (Red, yellow, green)[3]
Production Wafer Qty'—1 wafer (single platen)[3]
Platen Type—Electrostatic Clamp[3]
Loadloack—Left/Right 2 Chambers[3]
S/w version—13.30 Rev C[3]
Implant Monitor—LCD Touchscreen[3]
Service Monitor—LCD Touchscreen[3]
Ion Source Chambe—CCIG/Torr[3]
Beamline Chamber—CCIG/Torr[3]
End Station Chamber—CCIG/Torr[3]
Source Dry Punp—iQDP 80[3]
Stage Pump—iQDP 80+QMB 500[3]
Loadlock Rough Pump—iQDP 80[3]
Loadlock Turbo Pump—CT 4 L & CT 4 R: P/N: 8108998G001 & 8108999G001[3]
Process Chamber—CT 250 P/N: 8039113[3]
Source Turbo Pump—Pfeiffer TPH 1201 P / P/N: PMP 03702[3]
Resolver Turbo Pump—Pfeiffer HiPace 300[3]
Beamline Turbo Pump—Pfeiffer HiPace 700Gas Box Upgrade:[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]inventory listing