Comparison ledger
Plasma-Therm Versaline, Temescal CV-6S, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | VersalinePlasma-Therm | CV-6STemescal |
|---|---|---|
| OEM | Plasma-Therm | Temescal |
| Category | Deposition | Deposition |
| Wafer size | 4" | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline | Temescal CV-6S |
| Cited variants |
| |
| Specifications | ||
| Configuration | 3 Chamber Deposition[2] | — |
| ICP source | 1 kW 2 MHz[5] | — |
| Wafer size | up to 4 inches[5] | — |
| Plasma generators | 500 W, 13.56 MHz[5] | — |
| He-back-side cooling | Yes[5] | — |
| Processable materials | Silicon, SiO2, Si3N4, SiOxNy, polymer films such as PMMA, photoresist, polyimide[5] | — |
| Process types | PECVD, CVD, DRIE, ICP etching[1] | — |
| Number of deposition chambers | 3 (2 PCVD Versaline chambers, 1 HDP-CVD Versaline chamber)[2] | — |
| Silicon etch selectivity to photoresist | 100:1[6] | — |
| Silicon etch selectivity to SiO2 | 340:1[6] | — |
| Silicon etch selectivity to Al2O3 | 1000:1[6] | — |
| Trench aspect ratio | 50:1[6] | — |
| Isolated line aspect ratio | 200:1[6] | — |
| Endpoint detection | Optical emission spectroscopy (OES) for SOI[6] | — |
| PECVD Capability | Yes[1] | — |
| CVD Capability | Yes, 3 chamber deposition[2] | — |
| Chambers | PCVD Versaline Chambers (x2), HDP-CVD Versaline Chamber[2] | — |
| Additional Hardware | PM Modules (x3), Brooks MX 600, HDD, Versaline Software, Manuals[2] | — |
| Etch Capability | DRIE of silicon[6] | — |
| Etch Selectivity to Photoresist | 100:1[6] | — |
| Etch Selectivity to SiO2 | As high as 340:1[6] | — |
| Etch Selectivity to Al2O3 | Approximately 1000:1[6] | — |
| Achievable Trench Aspect Ratio | Up to 50:1[6] | — |
| Achievable Isolated Line Aspect Ratio | 200:1[6] | — |
| Endpoint Detection | Optical emission spectroscopy (OES) for SOI endpoint detection[6] | — |
| Substrate Compatibility | Silicon, Germanium[6] | — |
| Etch Masks | Photoresists, ebeam resists, silicon oxide, ALD Al2O3[6] | — |
| Manufacturer | — | Temescal[7] |
| Description | — | Load Locked Metal Evaporator Dual Gun[7] |
| Model | — | CV-6S[7] |
| Power supply | — | 10 kV[7] |
| E-beam sources | — | 2 Temescal 4-pocket series 260 e-beam sources[7] |
| Base pressure | — | ~ 5e-7 ultimate base pressure[7] |
| Vacuum system | — | Cryo-pumped system[7] |
| Load-lock | — | Present for quick turn-around[7] |
| Vacuum sequencing | — | Automatic vacuum sequencing[7] |
| Beam sweep control | — | Temescal Super Sweep e-beam sweep control[7] |
| Thickness monitoring | — | Inficon IC/5 programmable crystal thickness monitoring system[7] |
| Sample size | — | 1 wafer up to 4" diameter[7] |
| Metals, front gun | — | Ti, Pt, Ni, Au[7] |
| Metals, rear gun | — | Pd, Al, Ag, Ge[7] |
| Power supply type | — | Constant voltage, 6 kW high frequency switching power supply[4] |
| Operating capability | — | Designed to power and control one or two electron beam sources simultaneously[4] |
| Voltage/current regulation | — | +/- 0.5%[4] |
| Included components | — | Power module, high-voltage/gun control unit, filament transformer, 20 ft. cable set, operator manual[4] |
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