Waferpedia

Comparison ledger

770versus915

Plasma-Therm 770, Tegal 915, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
770Plasma-Therm
915Tegal
OEMPlasma-ThermTegal
CategoryEtchEtch
Wafer size100mm100mm
Process node——
Introduced——
Production run—1984–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyPlasma-Therm 770Tegal 915
Specifications
ManufacturerPlasmatherm (Unaxis)[1]—
ModelPlasma-Therm 770 SLR series[1]—
Tool typeDry Etch[1]—
System typeFluorine-based ICP etcher with loadlock[1]—
Plasma sourceInductively Coupled Plasma (ICP) coil[1]—
Substrate biasCapacitively coupled substrate RF supply[1]—
ICP coil power1000 W at 2 MHz[1]—
Substrate bias power500 W at 13.56 MHz[1]—
Available gasesC4F8, SF6, O2, Ar, N2, CHF3, CF4[1]—
Backside coolingHelium backside cooling[1]—
Chuck temperature10°C standard[1]—
Wafer handlingSingle 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[1]—
Control systemWindows-based computer control of process and wafer handling[1]—
Endpoint monitoringIn-situ laser monitor with camera and simulation software[1]—
Number of MFC gas controllers8[2]—
Gases (chlorine configuration)N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[2]—
Wafer size range (with appropriate kit)2" to 8"[2]—
Gases (previous usage, chlorine configuration)N₂, O₂, He, CHF₃, Cl₂, BCl₃[3]—
Batch capacity—Six cassettes of 100 mm wafers (150 pcs.) and four cassettes of 125 mm and 150 mm wafers (100 pcs.)[4]
Feed gases—Two independent feed gases[4]
Reaction chamber temperature control—Up to 100 degrees C[4]
Type—Plasma barrel etcher[4]
Wafer size—100mm[5]
Production start—1984[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  2. [2]nanolab.ucla.edunanolab.ucla.edu
  3. [3]wotol.comwotol.com
  4. [4]web.archive.orgweb.archive.org
  5. [5]waferpedia.comwaferpedia.com