Comparison ledger
Oxford Instruments Plasmalab 80 Plus, Oxford Instruments plasmapro-ngp80-rie, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 80 PlusOxford Instruments | plasmapro-ngp80-rieOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 80 | Oxford Instruments plasmapro-ngp80-rie |
| Specifications | ||
| Tool ID | DE-04[1] | — |
| Type | Reactive Ion Etching (RIE)[1] | — |
| Design | compact open-loading tool[1] | — |
| RF generator | 600W[1] | — |
| Wafer capacity | up to 200mm wafers[1] | — |
| Process gases | CF4, Ar, O2, SF6, CHF3[1] | — |
| Suitability | R&D or small-scale production[1] | — |
| RF power | 600W[1] | — |
| Maximum wafer size | 200mm[1] | — |
| Tool type | Reactive Ion Etching (RIE)[1] | — |
| Wafer size | Up to 200mm[1] | — |
| Loading type | Open load[1] | — |
| -Process | PECVD | — |
| -Voltage | 208 VAC, 3 Phase | — |
| -Equipment component | Main body | — |
| Description | Open load reactive ion etch system[2] | — |
| Wafer size designed for | 100 mm[2] | — |
| Wafer size maximum | 200 mm[2] | — |
| Platen size | 238 mm[2] | — |
| Power range | < 270 W[2] | — |
| Etch targets | Compound semiconductors and metals[2] | — |
| Equipment name | — | Oxford NGP80 RIE[3] |
| Tag/alias | — | Oxford-PlasmaPro-NGP80-RIE[3] |
| Process type | — | plasma etch[3] |
| Etch chemistry | — | CHF3/Ar plasma[4] |
| Process temperature | — | 20°C[4] |
| Typical application | — | Etching of SiO2 hard mask[4] |
| plasma chemistry | — | CHF3/Ar plasma[4] |
| use | — | Etching SiO2 hard mask[4] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →