Comparison ledger
Nanoscribe Photonic Professional GT, Nikon NSR-1505G4, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Photonic Professional GTNanoscribe | NSR-1505G4Nikon |
|---|---|---|
| OEM | Nanoscribe | Nikon |
| Category | Lithography | Lithography |
| Wafer size | 4" | 4" |
| Process node | — | better than 750 nm resolution; better than 150 nm alignment |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | g-line |
| Family | Nanoscribe Photonic Professional GT | Nikon NSR-1505G4 |
| Cited variants |
| — |
| Specifications | ||
| Machine type | 3D nanoprinter[1] | — |
| Process | two-photon absorption[1] | — |
| Laser wavelength | 780 nm[1] | — |
| Laser type | femtosecond laser[1] | — |
| Objectives | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[1] | — |
| 63x objective resolution | < 200 nm lateral dimensions; < 700 nm z-height[1] | — |
| 25x objective resolution | < 600 nm x-/y- diameter; < 2 µm z-height[1] | — |
| 10x objective resolution | < 1.2 µm x-/y- diameter; < 6 µm z-height[1] | — |
| 20x objective resolution | < 800 nm x-/y- diameter; < 5 µm z-height[1] | — |
| Piezo-stage travel range | 300 µm in all directions[1] | — |
| Coarse stage precision | lower than 1.5 µm[1] | — |
| High-resolution mode objective | 63x NA1.4, 360 µm working distance[1] | — |
| Micro- to mesoscale mode objective | 25x NA0.8, 380 µm working distance[1] | — |
| FAST macroscale mode objective | 10x NA0.3, 700 µm working distance[1] | — |
| Standard substrates | quartz, silicon, ITO-coated glass, 170 µm-thick borosilicate, microscope slides up to 26 x 76 mm, 4 inch wafers, 2 inch wafers[1] | — |
| Laser | Infrared femtosecond laser, 780 nm[1] | — |
| Resolution (lateral) | < 200 nm (with 63x objective)[1] | — |
| Resolution (vertical) | < 700 nm (with 63x objective)[1] | — |
| Max write area (block-free field) | 1000 µm (with 10x objective)[1] | — |
| Max structure volume | ~10 mm³ (FAST macroscale mode, 10x objective)[1] | — |
| Stage travel (piezo) | 300 µm in all directions[1] | — |
| Pattern generation software | Describe (slicing/hatching, converts .STL to exposure jobs)[1] | — |
| Sample formats | 25x25 mm² fused-silica, ITO-coated glass, silicon; 30 mm borosilicate; microscope slides up to 26x76 mm²; 4-inch and 2-inch wafers, thickness 350-550 µm[1] | — |
| Resolution (63x immersion) | Lateral <200 nm, axial <700 nm[1] | — |
| Resolution (25x immersion) | Lateral <600 nm, axial <2 µm[1] | — |
| Resolution (10x immersion) | Lateral <1.2 µm, axial <6 µm[1] | — |
| Resolution (20x air) | Lateral <800 nm, axial <5 µm[1] | — |
| Piezo stage travel | 300 µm in all directions[1] | — |
| Motorized XY stage range | 100 x 100 mm[2] | — |
| Photoresists | IP-Dip2, IP-S, IP-Q, IP-Visio, IP-PDMS, IPX-Q, IPX-Clear[1] | — |
| Substrates | 25x25 mm fused silica, ITO-coated glass, silicon, 30 mm borosilicate, microscope slides, 4-inch and 2-inch wafers[1] | — |
| Software | Describe (slicing/hatching), Nanowrite (operation)[1] | — |
| File formats | STL, DXF, GWL[1] | — |
| Writing modes | Dip-in laser lithography (DiLL), direct laser writing (DLW)[1] | — |
| Maximum structure height (various modes) | 10x DILL (IP-Q): 8 mm; 25x DILL (IP-S): 3 mm; 63x DILL (IP-Dip): 3 mm; Oil immersion (63x, 170 µm glass): 150 µm[3] | — |
| Exposure mechanism | Two-photon absorption[1] | — |
| Photoresist compatibility | UV-sensitive photoresists including standard i-line photoresists[1] | — |
| Scanning methods | PiezoScan mode (piezo-stage) and GalvoScan mode (galvo-mirrors)[1] | — |
| Objective magnifications | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[1] | — |
| Highest resolution | < 200nm lateral dimensions (with 63x objective)[1] | — |
| Voxel aspect ratio | Oval shape, typical aspect ratio (z-/x- axis) of about 3.5[1] | — |
| High resolution mode (3D SF) objective | 63x NA1.4, 360um working distance, block-free printing field Ø 200 µm[1] | — |
| Micro- to mesoscale mode (3D MF) objective | 25x NA0.8, 380um working distance, block-free printing field Ø 400 µm[1] | — |
| FAST macroscale mode (3D LF) objective | 10x NA0.3, 700um working distance, block-free printing field Ø 1000 µm[1] | — |
| Supported input format | CAD-generated 3D structure with .STL format[1] | — |
| Tilt-correction option | Available (piezo-scan mode only)[1] | — |
| Alignment option | Available on existing wafer/sample topography[1] | — |
| Tool type | 3D nanoprinter[1] | — |
| Exposure method | two-photon absorption[1] | — |
| High-resolution mode block-free printing field | 200 µm diameter[1] | — |
| Micro- to mesoscale mode block-free printing field | 400 µm diameter[1] | — |
| FAST macroscale mode block-free printing field | 1000 µm diameter[1] | — |
| Listed sample holders and substrates | 25 x 25 mm² fused-silica substrate, 25 x 25 mm² ITO-coated glass substrate, 25 x 25 mm² silicon substrate, ∅ 30 mm thin borosilicate substrate, microscope slides up to 26 x 76 mm², 4 inch wafers, and 2 inch wafers[1] | — |
| Objective specifications | 63X immersion, 25X immersion, 10X immersion, and 20X for air[2] | — |
| Sample holders | 4 inch wafers, thickness between 350 and 550 um[1] | — |
| File format | STL[1] | — |
| Job code | GWL[1] | — |
| Supported materials | UV-sensitive photoresists, including standard i-line photoresists[1] | — |
| Galvo scanning | ultrafast galvo-mirrors scan the laser focal point in x- and y-directions[1] | — |
| Type | — | Wafer stepper[4] |
| Reduction | — | 5x reduction[4] |
| Reticle size | — | 5" reticle[4] |
| Wafer size | — | 4" wafers[4] |
| Exposure source | — | g-line UV[4] |
| Resolution | — | better than 750 nm[4] |
| Alignment | — | better than 150 nm[4] |
| Reduction factor | — | 5x[4] |
| Alignment accuracy | — | better than 150 nm[4] |
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