Waferpedia

Comparison ledger

9600 Dryversus100 ICP Fluorine

Lam Research 9600 Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
9600 DryLam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research TCP 9600Oxford Instruments 100 ICP Fluorine
Specifications
ConfigurationMissing PC and Turbo / Controller[1]—
Process typeDry Etch (Metal)[2]—
Wafer size200 mm[2]4 inch, 6 inch, 8 inch (with clamp change)[3]
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]fabsurplus.comfabsurplus.com
  3. [3]nanofab.utah.edunanofab.utah.edu