Comparison ledger
Lam Research 590, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 590Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 590 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Voltage | 208V[1] | — |
| Wafer size | 6 inch[1] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| RF frequency | 13.56 MHz[3] | — |
| Pressure | 2.8 Torr[3] | — |
| Gap | 0.38 cm[3] | — |
| Power (low) | 450 W[3] | — |
| Power (high) | 850 W[3] | — |
| OEM | Lam Research[1] | — |
| Model | 590[1] | — |
| Category | Etcher[1] | — |
| Power | 208V[1] | — |
| Plasma recipe entry | CF4+CHF3+He (90:30:120 sccm)[3] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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