Comparison ledger
Lam Research 4520 XL, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4520 XLLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Software Version | E1.6.1-002[2] | — |
| Main UI (No PC Remote) | Pentium 33 NextStep[2] | — |
| Configuration | PC functions but fan needs changing[2] | — |
| Model | 4520 XL[2] | — |
| Manufacturer | Lam Research[2] | — |
| Category | Etch[3] | — |
| Wafer sizes | 8 inch[2] | — |
| Main UI | Pentium 33 NextStep[2] | — |
| PC status | PC functions but fan needs changing[2] | — |
| Process application | Contact etch, planarization, via etch, trench mask etch, pad etch[4] | — |
| Operating pressure | 30-200 mtorr[4] | — |
| Aspect ratio | 5:1 or greater[4] | — |
| Selectivity | ≥ 50:1 for contact and ≥ 30:1 for via etch[4] | — |
| BPSG etch rate | >8000 A/min[4] | — |
| TEOS etch rate | >6000 A/min[4] | — |
| Uniformity | +/- 7% 3σ[4] | — |
| Selectivity BPSG/TEOS to poly | > 30:1[4] | — |
| Particles | <0.06/cm2 at >0.3μm size[4] | — |
| Uptime | ≥ 85%[4] | — |
| MTTC | < 6 hours[4] | — |
| MTBF | ≥ 125 hours[4] | — |
| MTTR | ≤ 4 hours[4] | — |
| Feature | Multifrequency diode[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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