Comparison ledger
Kurt Lesker 150LX, Temescal SuperSweep64, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150LXKurt Lesker | SuperSweep64Temescal |
|---|---|---|
| OEM | Kurt Lesker | Temescal |
| Category | Deposition | Deposition |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2005 Third-party support only |
| Control system | — | — |
| Generation | — | — |
| Family | Kurt Lesker 150LX | Temescal SuperSweep64 |
| Specifications | ||
| OEM | Kurt Lesker[1] | — |
| Model | ALD-150LX[1] | — |
| Type | Plasma-enhanced atomic layer deposition (PE-ALD) system[1] | programmable beam sweep controller[5] |
| Location | Cleanroom[1] | — |
| Operating mode | Load-locked system[1] | — |
| In situ metrology | Film Sense FS-1 Multi-Wavelength ellipsometer[1] | — |
| Wafer size | Up to full 150 mm (6") wafers[1] | — |
| Process | Plasma-enhanced atomic layer deposition (PE-ALD)[1] | — |
| Substrate size | Up to 150mm[2] | — |
| Substrate heating | Up to 600°C[2] | — |
| Load lock | Load-locked system[1] | — |
| ALD process modes | Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)[2] | — |
| Ellipsometry | Standard on chamber[2] | — |
| Precursor inlets to chamber | Four (4), standard on chamber, independently heated[2] | — |
| Precursor sources | Up to twelve (12)[3] | — |
| Precursor types | Up to fourteen (14)[2] | — |
| Plasma source | 1 kW RF remote ICP[4] | — |
| Process type | Plasma-enhanced atomic layer deposition (PE-ALD)[1] | — |
| Substrate temperature | Up to 600°C[2] | — |
| Process modes | Plasma enhanced, thermal only, dynamic and static exposure for HAR, variable residence mode (VRM)[2] | — |
| Ellipsometry ports | Standard on chamber[2] | — |
| Precursor inlets | Four standard on chamber, independently heated[2] | — |
| Precursor capacity | Up to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[2] | — |
| Substrate handling | Load locked single wafer transfer[4] | — |
| Process gases | Argon, oxygen, nitrogen, hydrogen, ammonia, ozone[4] | — |
| controller type | — | programmable beam sweep controller[5] |
| system association | — | listed under the FC-4400 system's electron beam source, power supply, and sweep section[5] |
| wafer capacity referenced in associated system | — | 30 150 mm wafers per load[5] |
| Operation | — | fully digital operation[6] |
| Internal waveform storage | — | up to 64 patterns[6] |
| Addressable points | — | 1024[6] |
| Waveform types | — | sine, triangle, saw-tooth, clipped, and arbitrary[6] |
| Frequency range | — | 1 to 200 Hz[6] |
| Max. sweep current | — | -4 A to +4 A[6] |
| Power requirements | — | 100–240 V ac, 50–60 Hz[6] |
| Computer I/O ports | — | RS-232 and RS-485[6] |
| Compatible system | — | Temescal FC-4400 deposition system[7] |
| Compatibility | — | Compatible with almost any commercially available e-beam gun[8] |
| Waveform resolution | — | 8 bits (0.4%)[8] |
| Weight | — | 10 lbs[8] |
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