Comparison ledger
KLA 1.112 PSL Wafer, Tescan S8000X, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | S8000XTescan | |
|---|---|---|
| OEM | KLA | Tescan |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA 1.112 PSL Wafer | Tescan S8000X |
| Specifications | ||
| Configuration | NIST Traceable[1] | — |
| Wafer Size | 8 inch[1] | — |
| NIST Traceable | True[1] | — |
| Compatible Tools | Surfscan 6xy0 and Sp1[2] | — |
| Instrument type | — | Plasma-source focused ion beam microscope and high-resolution BrightBeam scanning electron microscope[3] |
| Ion source | — | Xe+ ion plasma source[3] |
| Focused beam current | — | Up to 1 uA[3] |
| Milling rate | — | Up to 50X faster than prior Ga+ ion technology[3] |
| Electron microscope optics | — | Field-free, ultra-high resolution optics with improved low-energy imaging[3] |
| Analytical capability | — | Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)[3] |
| Cryogenic capability | — | Cryogenic stage and sample transfer loadlock allowing work down to -160 C or introduction of frozen samples[3] |
| Nanomanipulator | — | Cryogenic Kleindiek nanomanipulator for in-situ interaction and lift-out of frozen sections for subsequent TEM analysis[3] |
| Ion source type | — | Xe+ ion plasma source[3] |
| Maximum focused beam current | — | 1 uA[3] |
| Electron source type | — | BrightBeam SEM, field-free, ultra-high resolution[3] |
| Analytical capabilities | — | ToF-SIMS and EDS[3] |
| Cryogenic stage temperature range | — | down to -160 C[3] |
Plan your fab
Building a Metrology & Inspection process? Get a complete equipment list.
Open the fab equipment planner →