Comparison ledger
Karl Suss MA6, Raith EBPG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MA6Karl Suss | EBPG5000Raith |
|---|---|---|
| OEM | Karl Suss | Raith |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 1 micron and better; 0.6 µm under optimum conditions in vacuum mode | sub-10 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | — |
| Family | Karl Suss MA6 | Raith EBPG5000 |
| Cited variants | ||
| Specifications | ||
| Substrate range | 5 x 5 mm dies to wafers up to 150 mm[5] | — |
| Maximum substrate thickness | 6 mm[5] | — |
| Resolution | 0.6 µm under optimum conditions in vacuum mode[5] | — |
| Light source | Broadband Hg lamp[5] | — |
| Wavelength channels | Channel 1 (405 nm) and Channel 2 (365 nm)[5] | — |
| Wafer chucks available | 3, 4, 6 inch[5] | — |
| Mask holders available | 4, 5, 7 inch[5] | — |
| Top side alignment precision | 0.5 µm[5] | — |
| Objectives | 5X, 10X, and 20X[5] | — |
| Alignment features | Splitfield microscope with storage and automatic movement between reference points; Bottom-Side Alignment (BSA); Wedge Error Compensation (WEC)[5] | — |
| Exposure modes | proximity, soft contact, hard contact, and vacuum[5] | — |
| Alignment accuracy | 0.5 µm (motorized top side alignment)[5] | — |
| Microscope objectives | 5X, 10X, and 20X[5] | — |
| Wedge Error Compensation | Yes (ensures parallelism between substrate and photomask)[5] | — |
| Maximum substrate size | 150 mm (wafers) or 5x5 mm to 150 mm irregular substrates[5] | — |
| Resolution (vacuum mode) | 0.6 µm (optimum conditions)[5] | — |
| Bottom-Side Alignment | Available (BSA)[5] | — |
| Resolution (optimum vacuum mode) | 0.6 µm[5] | — |
| Resolution (typical) | 1 µm and better[6] | — |
| Exposure methods | flood, proximity, soft contact, hard contact, low vacuum, vacuum[6] | — |
| Mask sizes | 2.5x2.5, 4x4, 5x5, 8x8 inches[6] | — |
| Wafer size (top-side alignment) | up to 6 inches (2, 3, 4, 6 inch)[6] | — |
| Wafer size (bottom-side alignment) | 3 and 4 inch[6] | — |
| Wavelength range | UV broadband 250-450 nm; i-line 365 nm; g-line 436 nm[6] | — |
| Light source (UIC) | Broadband Hg lamp with Channel 1 (405 nm) and Channel 2 (365 nm)[5] | — |
| Alignment accuracy (motorized top-side) | 0.5 µm[5] | — |
| Tool type | — | Ebeam lithography tool/system[3] |
| Feature capability | — | smaller than 10 nm features[3] |
| Placement accuracy | — | less than 20 nm[3] |
| Electron gun | — | 100 keV thermal field emission gun[3] |
| Beam type | — | Gaussian beam[3] |
| Pattern generator | — | 50 MHz[3] |
| Alignment | — | direct write mark detection and alignment software[3] |
| Wafer holders | — | 50 mm, 100 mm, and 150 mm wafers[3] |
| Mask holders | — | 5 inch masks and smaller piece parts[3] |
| Writing capability | — | 155 mm[4] |
| Maximum wafer size | — | up to 6 inches[4] |
| Maximum mask size | — | up to 6 inches[4] |
| Minimum feature size | — | less than 8 nm[4] |
| Field size | — | variable field size to 1 mm at all kVs[4] |
| Acceleration voltage | — | 100 keV[3] |
| Gun type | — | thermal field emission[3] |
| Pattern generator frequency | — | 50 MHz[3] |
| Overlay accuracy | — | <20 nm[3] |
| Wafer sizes supported | — | 50 mm, 100 mm, 150 mm[3] |
| Mask size supported | — | 5 inch[3] |
| Temperature control | — | 21°C ± 0.1°C[3] |
| Electron source type | — | Thermal Field Emission gun (TFE)[3] |
| Beam energy (EPFL EBPG5000ES) | — | 100 keV[3] |
| Pattern generator frequency (EPFL EBPG5000ES) | — | 50 MHz[3] |
| Minimum feature size (EPFL EBPG5000ES) | — | smaller than 10 nm[3] |
| Substrate support (EPFL EBPG5000ES) | — | holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[3] |
| Operating temperatures | — | 21 °C ± 0.1 °C (cleanroom environment)[3] |
| Model identifier (UChicago) | — | Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[4] |
| Wafer size (UChicago model) | — | up to 6″ wafers[4] |
| Mask size (UChicago model) | — | up to 6″ masks[4] |
| Minimum feature size (UChicago model) | — | less than 8 nm[4] |
| Operating voltages (UChicago model) | — | 20, 50, and 100 kV[4] |
| Pattern generator frequency (UChicago model) | — | 50 / 100 MHz[4] |
| Minimum feature (EPFL EBPG5000ES) | — | smaller than 10 nm[3] |
| Electron source (EPFL EBPG5000ES) | — | 100 keV thermal field emission gun[3] |
| Pattern generator (EPFL EBPG5000ES) | — | 50 MHz[3] |
| Substrate holders (EPFL EBPG5000ES) | — | 50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[3] |
| Cleanroom environment | — | custom cleanroom maintained at 21°C ± 0.1°C[3] |
| Minimum feature (PNF EBPG5200) | — | less than 8 nm[4] |
| Writing capability (PNF EBPG5200) | — | 155 mm[4] |
| Substrate sizes (PNF EBPG5200) | — | wafers up to 6 in; masks up to 6 in[4] |
| Acceleration voltages (PNF EBPG5200) | — | 20, 50, and 100 kV[4] |
| Pattern generator (PNF EBPG5200) | — | 50 / 100 MHz[4] |
| Field size (PNF EBPG5200) | — | variable field size to 1 mm at all kVs[4] |
| Electron source (PNF EBPG5200) | — | Thermal Field Emission gun[4] |
| Feature size | — | smaller than 10 nm features[3] |
| Gun | — | 100 keV thermal field emission gun[3] |
| Beam | — | Gaussian beam[3] |
| Holders | — | holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[3] |
| Wafer size | — | up to 6 inch wafers[4] |
| Mask size | — | up to 6 inch masks[4] |
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