Waferpedia

Comparison ledger

6100 C WaferversusCleanTrack ACT 8

GCA 6100 C Wafer, Tokyo Electron CleanTrack ACT 8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
CleanTrack ACT 8Tokyo Electron
OEMGCATokyo Electron
CategoryLithographyLithography
Wafer size100mm100mm
Process node—DUV lithography
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyGCA 6100 C WaferTokyo Electron CleanTrack ACT 8
Specifications
ConfigurationMaximus 1000 Light Source (350w)[1]In-line with ASML PAS5500/350C stepper forming a DUV lithography cluster[3]
Wafer size100 mm AWH1 (Automatic Wafer Handler)[1]100 mm (4 inch) standard, convertible to 150 mm (6 inch) on demand[3]
Lens10X g-line (436),   NA=0.28[1]—
Equipment Rack(Top Down)[1]—
MakeGCA[1]—
Model6100 C[1]—
CategoryLithography[2]—
Wafer handlingAWH1 (Automatic Wafer Handler)[1]—
Stage travel150 mm X/Y stage travel[1]—
Optics10X g-line (436), NA=0.28[1]—
Light sourceMaximus 1000 Light Source (350w)[1]—
ControllerRZE PC Upgrade Controller (v605.1 Operating System)[1]—
Alignment monitorAlignment Monitor & PC Monitor[2]—
Equipment type—Industry-standard wafer coater and developer[3]
Lithography mode—DUV lithography[3]
Exposure interface—In-line exposure unit interface[3]
Throughput / footprint—High throughput in a small footprint[3]
Cluster configuration—Coater and developer track in-line with an ASML PAS5500/350C stepper[3]
Configured wafer size—100 mm (4") wafers[3]
Convertible wafer size—150 mm (6") wafers[3]
Process materials—KrF photoresist and ancillary anti-reflective coatings[3]
Track blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3]
Lithography type—DUV (KrF)[3]
In-line stepper interface—ASML PAS5500/350C[3]
Cassette ports—Four (two for 100 mm, two for 150 mm)[3]
Resist pump lines—4 for photoresist (COT), 2 for BARC (BCT)[3]
Developer lines—2 pressure-driven lines[3]
BARC materials supported—DS-K101 (Brewer Science), DUV-42P[3]
Photoresists supported—M108Y (JSR Corporation, 0.18 μm), M35G (0.25 μm)[3]
Developer used—TMA238WA[3]
Solvent used—Microposit EC Solvent (Dupont)[3]
Temperature/humidity control—Internal laminar flow with regulated temperature, humidity, and cup temperature/humidity controller (T&H)[3]
Water Flow—Left to Right[4]
Software Version—1.18.003[5]
CIM—SECS[5]
Handler System—CRA, PRA (2)[5]
Factory Interface—SMIF (3)[5]
Coater/Developer—Wafer coater and developer[3]
Wafer Size (Configured)—100 mm (4")[3]
Wafer Size (Conversion Possible)—150 mm (6") - rare and on-demand[3]
Main Blocks—Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[3]
Spinning Units—Bottom-layer Coater (BCT), Coater (COT), Developer (DEV)[3]
Thermal Plates—Low-temperature Hot Plate, High-temperature Hot Plate, High-speed Chill Plate, ADHesion plates, Precision Hot Plates, Transition Station, Transition Chill Plate[3]
Interface Buffer—25-slot buffer[3]
Photoresist—KrF photoresist (M108Y, M35G)[3]
BARC—DS-K101 and DUV-42P[3]
Developer—TMA238WA[3]
External Modules—AC Power Box, Chemical Cabinet, Temperature and Humidity Controller, Thermostatic Water Supply[3]
In-line exposure unit—ASML PAS5500/350C[3]
Wafer capacity (cassette ports)—4[3]
BARC types—DS-K101 (Brewer Science) and DUV42P[3]
Photoresist types—M108Y (JSR Corporation) and M35G[3]
Exposure unit interface—in-line exposure unit interface[3]
Chemical filters—ULPA chemical filters[3]
Ovens—high-precision ovens[3]
Conversion wafer size—150 mm (6") wafers[3]
Photoresist chemistry—KrF photoresist[3]
Ancillary coating—AntiReflective Coatings[3]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]epfl.chepfl.ch
  4. [4]inventory listing
  5. [5]inventory listing