Comparison ledger
EV Group EVG40, Filmetrics R50, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | EVG40EV Group | R50Filmetrics |
|---|---|---|
| OEM | EV Group | Filmetrics |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group EVG40 | Filmetrics R50 |
| Cited variants | — | |
| Specifications | ||
| Measurement type | Top-to-bottom side alignment accuracy measurement system[1] | 4-point probe[4] |
| Technology | Non-destructive, visible light, self calibrating technology[1] | — |
| Measurement capability | Repeatable top-to-bottom side alignment accuracy measurement[1] | — |
| Supported wafer or substrate size | Any wafer or substrate material up to 200 mm[1] | — |
| Objective magnification | High power objectives from 5x to 50x[1] | — |
| Absolute accuracy | < 0.5 µm with a statistical probability of 99%[1] | — |
| Control platform | PC-based measurement system[1] | — |
| Automation range | Manual to fully-automated versions[1] | — |
| Standard basic unit | Alignment stage optics[1] | — |
| Advanced basic unit | Alignment stage optics; advanced features include image recognition system, quick transparent overlay, and linewidth measurement mode[1] | — |
| Semi-automated basic unit | Alignment stage optics; advanced features include image recognition system, quick transparent overlay, and linewidth measurement mode; automation features include programmable microscope stage rack and motorized chuck rotation[1] | — |
| Fully-automated basic unit | Alignment stage optics; advanced features include image recognition system, quick transparent overlay, and linewidth measurement mode; automation features include programmable microscope stage rack, motorized chuck rotation, and robotic autoload cassette-to-cassette[1] | — |
| Wafer size | Any wafer or substrate material up to 200 mm[1] | — |
| Measured parameters (NT variant) | Lithography-relevant parameters like critical dimensions, as well as bond alignment accuracy[2] | — |
| Measurement methods (NT variant) | Critical dimension (CD) measurement, die-to-die alignment verification, multi-layer thickness measurement[2] | — |
| Measurement accuracy (NT variant) | High measurement accuracy in vertical and lateral direction[2] | — |
| Overlay measurement (D2W variant) | 100 percent die overlay measurement with high precision[3] | — |
| Default configuration | — | configured by default for metallic layers[4] |
| Default sample thickness | — | 525 um +/- 25 um[4] |
| Equipment section | — | Metrology[4] |
| Related equipment on same page group | — | AIT CMT-SR2000N 4-Point Probe Measurement System; MPI TS150 Probe Station[4] |
| Default material | — | metallic layers[4] |
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