Waferpedia

Comparison ledger

100versus806

CEE 100, OAI 806, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
806OAI
OEMCEEOAI
CategoryLithographyLithography
Wafer size6"6"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 100OAI 806
Cited variants—
Specifications
Tool typeSpray Developer[1]—
Accepts wafer sizeup to 6" wafers[2]—
Programmable programs10 programs[2]—
Steps per programup to 10 steps[2]—
Programmable step parametersAcceleration, Speed, Time[2]—
Associated documentCEE Model 100CB Spinner.doc[2]—
Wafer sizeUp to 6 inches[2]—
Programs10 programs each with up to 10 steps[2]—
Control parametersAcceleration, Speed, Time[2]—
Model—OAI 806 Mask Aligner[3]
Patterning substrate size—up to 6 inches[3]
Contact modes—soft, hard, and proximity contact modes[3]
Alignment accuracy—submicron[3]
UV source—collimated UV light source[3]
Workholding—vacuum chuck[3]
Optics—integrated microscope optics[3]
Stage—motorized stage[3]
Optional capability—backside alignment[3]
Substrate size—up to 6 inches[3]
Light source—collimated UV[3]
Backside alignment—optional[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]colorado.educolorado.edu