Comparison ledger
CEE 100, Nanoscribe Photonic Professional GT, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | Photonic Professional GTNanoscribe |
|---|---|---|
| OEM | CEE | Nanoscribe |
| Category | Lithography | Lithography |
| Wafer size | 6" | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Nanoscribe Photonic Professional GT |
| Cited variants |
|
|
| Specifications | ||
| Tool type | Spray Developer[1] | 3D nanoprinter[2] |
| Accepts wafer size | up to 6" wafers[3] | — |
| Programmable programs | 10 programs[3] | — |
| Steps per program | up to 10 steps[3] | — |
| Programmable step parameters | Acceleration, Speed, Time[3] | — |
| Associated document | CEE Model 100CB Spinner.doc[3] | — |
| Wafer size | Up to 6 inches[3] | — |
| Programs | 10 programs each with up to 10 steps[3] | — |
| Control parameters | Acceleration, Speed, Time[3] | — |
| Machine type | — | 3D nanoprinter[2] |
| Process | — | two-photon absorption[2] |
| Laser wavelength | — | 780 nm[2] |
| Laser type | — | femtosecond laser[2] |
| Objectives | — | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[2] |
| 63x objective resolution | — | < 200 nm lateral dimensions; < 700 nm z-height[2] |
| 25x objective resolution | — | < 600 nm x-/y- diameter; < 2 µm z-height[2] |
| 10x objective resolution | — | < 1.2 µm x-/y- diameter; < 6 µm z-height[2] |
| 20x objective resolution | — | < 800 nm x-/y- diameter; < 5 µm z-height[2] |
| Piezo-stage travel range | — | 300 µm in all directions[2] |
| Coarse stage precision | — | lower than 1.5 µm[2] |
| High-resolution mode objective | — | 63x NA1.4, 360 µm working distance[2] |
| Micro- to mesoscale mode objective | — | 25x NA0.8, 380 µm working distance[2] |
| FAST macroscale mode objective | — | 10x NA0.3, 700 µm working distance[2] |
| Standard substrates | — | quartz, silicon, ITO-coated glass, 170 µm-thick borosilicate, microscope slides up to 26 x 76 mm, 4 inch wafers, 2 inch wafers[2] |
| Laser | — | Infrared femtosecond laser, 780 nm[2] |
| Resolution (lateral) | — | < 200 nm (with 63x objective)[2] |
| Resolution (vertical) | — | < 700 nm (with 63x objective)[2] |
| Max write area (block-free field) | — | 1000 µm (with 10x objective)[2] |
| Max structure volume | — | ~10 mm³ (FAST macroscale mode, 10x objective)[2] |
| Stage travel (piezo) | — | 300 µm in all directions[2] |
| Pattern generation software | — | Describe (slicing/hatching, converts .STL to exposure jobs)[2] |
| Sample formats | — | 25x25 mm² fused-silica, ITO-coated glass, silicon; 30 mm borosilicate; microscope slides up to 26x76 mm²; 4-inch and 2-inch wafers, thickness 350-550 µm[2] |
| Resolution (63x immersion) | — | Lateral <200 nm, axial <700 nm[2] |
| Resolution (25x immersion) | — | Lateral <600 nm, axial <2 µm[2] |
| Resolution (10x immersion) | — | Lateral <1.2 µm, axial <6 µm[2] |
| Resolution (20x air) | — | Lateral <800 nm, axial <5 µm[2] |
| Piezo stage travel | — | 300 µm in all directions[2] |
| Motorized XY stage range | — | 100 x 100 mm[4] |
| Photoresists | — | IP-Dip2, IP-S, IP-Q, IP-Visio, IP-PDMS, IPX-Q, IPX-Clear[2] |
| Substrates | — | 25x25 mm fused silica, ITO-coated glass, silicon, 30 mm borosilicate, microscope slides, 4-inch and 2-inch wafers[2] |
| Software | — | Describe (slicing/hatching), Nanowrite (operation)[2] |
| File formats | — | STL, DXF, GWL[2] |
| Writing modes | — | Dip-in laser lithography (DiLL), direct laser writing (DLW)[2] |
| Maximum structure height (various modes) | — | 10x DILL (IP-Q): 8 mm; 25x DILL (IP-S): 3 mm; 63x DILL (IP-Dip): 3 mm; Oil immersion (63x, 170 µm glass): 150 µm[5] |
| Exposure mechanism | — | Two-photon absorption[2] |
| Photoresist compatibility | — | UV-sensitive photoresists including standard i-line photoresists[2] |
| Scanning methods | — | PiezoScan mode (piezo-stage) and GalvoScan mode (galvo-mirrors)[2] |
| Objective magnifications | — | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[2] |
| Highest resolution | — | < 200nm lateral dimensions (with 63x objective)[2] |
| Voxel aspect ratio | — | Oval shape, typical aspect ratio (z-/x- axis) of about 3.5[2] |
| High resolution mode (3D SF) objective | — | 63x NA1.4, 360um working distance, block-free printing field Ø 200 µm[2] |
| Micro- to mesoscale mode (3D MF) objective | — | 25x NA0.8, 380um working distance, block-free printing field Ø 400 µm[2] |
| FAST macroscale mode (3D LF) objective | — | 10x NA0.3, 700um working distance, block-free printing field Ø 1000 µm[2] |
| Supported input format | — | CAD-generated 3D structure with .STL format[2] |
| Tilt-correction option | — | Available (piezo-scan mode only)[2] |
| Alignment option | — | Available on existing wafer/sample topography[2] |
| Exposure method | — | two-photon absorption[2] |
| High-resolution mode block-free printing field | — | 200 µm diameter[2] |
| Micro- to mesoscale mode block-free printing field | — | 400 µm diameter[2] |
| FAST macroscale mode block-free printing field | — | 1000 µm diameter[2] |
| Listed sample holders and substrates | — | 25 x 25 mm² fused-silica substrate, 25 x 25 mm² ITO-coated glass substrate, 25 x 25 mm² silicon substrate, ∅ 30 mm thin borosilicate substrate, microscope slides up to 26 x 76 mm², 4 inch wafers, and 2 inch wafers[2] |
| Objective specifications | — | 63X immersion, 25X immersion, 10X immersion, and 20X for air[4] |
| Sample holders | — | 4 inch wafers, thickness between 350 and 550 um[2] |
| File format | — | STL[2] |
| Job code | — | GWL[2] |
| Supported materials | — | UV-sensitive photoresists, including standard i-line photoresists[2] |
| Galvo scanning | — | ultrafast galvo-mirrors scan the laser focal point in x- and y-directions[2] |
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