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Comparison ledger

100versusHMR900

CEE 100, Hamatech HMR900, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
HMR900Hamatech
OEMCEEHamatech
CategoryLithographyLithography
Wafer size6"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 100Hamatech HMR900
Cited variants—
Specifications
Tool typeSpray Developer[1]Mask processor[3]
Accepts wafer sizeup to 6" wafers[2]—
Programmable programs10 programs[2]—
Steps per programup to 10 steps[2]—
Programmable step parametersAcceleration, Speed, Time[2]—
Associated documentCEE Model 100CB Spinner.doc[2]—
Wafer sizeUp to 6 inches[2]—
Programs10 programs each with up to 10 steps[2]—
Control parametersAcceleration, Speed, Time[2]—
Primary use—Cr-plate wet processing or cleaning[3]
Installed media—Developing exposed resist (AZ 351B developer), Cr wet etching (TechniEtch Cr N°1), and resist stripping (AZ 400K non-diluted)[3]
Substrate size—Square plates up to 7" x 7"[3]
Supported chuck sizes—4" x 4", 5" x 5", 6" x 6", and 7" x 7" square plates[3]
Loading—Manual loading and unloading of substrates[3]
Rotation—Direct and reverse rotation (CW, CCW)[3]
Speed accuracy—+/-1 rpm[3]
Programmable recipes—20 recipes with 50 steps each[3]
Substrate fixation—Mechanical side edge substrate fixation; chucks for Cr plates do not use vacuum clamping[3]
Substrate handling—Manual loading and unloading[3]
Chuck size—4" x 4", 5" x 5", 6" x 6", 7" x 7" square plates[3]
Recipe capacity—20 recipes, 50 steps each[3]
Chemical media—AZ 351B developer, TechniEtch Cr N°1, AZ 400K non-diluted, with DI water rinse and drying[3]
Equipment type—Mask processor[3]
Process type—Cr-plate wet processing or cleaning[3]
Chemical treatment 1—Developing exposed resist with AZ 351B developer[3]
Chemical treatment 2—Cr wet etching with TechniEtch Cr N°1[3]
Chemical treatment 3—Resist stripping with AZ 400K non-diluted[3]
Rinse and dry—Intermediate DI water rinse steps and final drying[3]
Supported mask and reticle types—4, 5 and 7 inch masks for mask-aligner usage; 6 inch reticules for DUV stepper usage[3]
Recipe capability—20 recipes with 50 steps each can be programmed[3]
Operation—manual loading and unloading of the substrates[3]
Substrate format—square plates up to 7" x 7"[3]
Supported plate sizes—4" x 4", 5" x 5", 6" x 6", 7" x 7"[3]
Chuck type—multi-size chuck for square plates[3]
Acceleration / speed accuracy—smooth acceleration and speed accuracy +/-1 rpm[3]
Process steps—developing exposed resist, Cr wet etching, resist stripping, intermediate DI water rinse steps, and final drying[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]epfl.chepfl.ch