Waferpedia

Comparison ledger

101-149-053 Gold BoosterversusEV 501 Wafer

Branson 101-149-053 Gold Booster, EV Group EV 501 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
OEMBransonEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyBranson 101-149-053 Gold BoosterEV Group EV 501 Wafer
Specifications
Configuration1:1.5[1]Refurbished[4]
ManufacturerBranson[2]—
Model101-149-053[2]—
TypeGold Booster[2]—
Operating frequency20 kHz[3]—
Gain1:1.5[2]—
Mounting thread1/2-20[3]—
Length5.4 in[3]—
Gain ratio1:1.5[2]—
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding[4]
Thickness—Max wafer stack thickness 6 mm[4]
Bottom side heater—550°C max. in 1°C steps[4]
Temperature uniformity—± 1,5 %[4]
Bonding capability—Capable of thermo compression, fusion or anodic wafer bonding[4]
Bond chamber—Bond chamber for small pieces up to 150 mm wafers (with correct tooling)[4]
Vacuum pump—Turbo Pump[4]
Power supply—High voltage power supply for anodic bonding (additional tooling may be required)[4]
Electronics—Electronics Rack[4]
Control/software—Computer & Software[4]
Display—LCD Monitor[4]
Pump—Roughing Pump[4]
Manual—Operations Manual[4]
Condition—Refurbished[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]nextdayautomation.comnextdayautomation.com
  4. [4]inventory listing