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Comparison ledger

NV 8200versus0216 7696, E 11368072 ESC

Axcelis NV 8200, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
NV 8200Axcelis
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size200mm—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV 8200Varian 0216 7696, E 11368072 ESC
Specifications
Energy config.from 3 to 250keV (single); up to 750 keV (triple)[1]—
Wafer sizeWafer size 200mm with holders for different wafers sizes[1]—
Dose> 1E11at/cm²[1]—
Beam currentI < 1mA[1]—
ConfigurationGas lines:[1]Platen ADV-S Type[4]
Ion sources3 ion sources with dual vaporizer on each source[1]—
MagnetDipole magnet 90° - Buckley Systems – de 0 a 75 AMU in full charge[1]—
Cryo compressorCTI Cryogenics 9600[1]—
MakeAxcelis[2]—
ModelNV 8200[2]—
Wafer Sizes8 inch[3]—
Process gas lines4 process gas lines (BF2/PH3/AsH3/Hydrogen)[1]—
Gas line1 gas line (Argon)[1]—
Mass range0 to 75 AMU in full charge[1]—
Target positioning / scanning systemParallel beam; electrostatic angle correction programmable; tilt 0°-60°[1]—
End stationFlat/notch alignment with buffet cassette (3 cassette positions); 3 axis robotic; Pick & Place system[1]—
Turbo pumpsEdwards STP 1003C for Source; Pfeiffer HiPace 300 + Pfeiffer TPH 1201 P for Beam Line[1]—
Rough pumpsAdixen A 103 P for Source; Adixen A 103 P for Beam Line; Alcatel/Adixen ADS 602 P for End Station[1]—
Clamp typeElectrostatic clamp[1]—
SoftwareSPARC V[1]—
SoftSPARC V[1]—
Non-functional modulesPC remote[1]—
Type—ESC Platen ADV-S Type[4]
Category—Ion Implantation[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com