Comparison ledger
ASML PAS 5500, SUSS MicroTec BA8 Gen4 Pro, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PAS 5500ASML | BA8 Gen4 ProSUSS MicroTec |
|---|---|---|
| OEM | ASML | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 200mm | 200mm |
| Process node | 280 nm | — |
| Introduced | 2000 | — |
| Production run | 2000–2010 | — |
| Lifecycle | Legacy | — |
| Lifecycle milestones | 1995 ASML PAS 5500/400 release | — |
| Control system | — | — |
| Generation | i-line | Gen4 Pro |
| Family | ASML PAS 5500 | SUSS MicroTec BA8 Gen4 Pro |
| Cited variants | — | |
| Specifications | ||
| Technology | i-line stepper[1] | — |
| Exposure wavelength | 365 nm[1] | — |
| Reduction | 5X reduction[1] | — |
| Resolution | 280 nm[1] | — |
| Wafer handling | Fully automated wafer handling system[1] | — |
| Supported substrate diameter | 200 mm diameter wafers down to small pieces[1] | — |
| Throughput | 84 wafers per hour[1] | — |
| Minimum resolution | 0.45 μm[2] | — |
| Mask size | 5 inch[2] | — |
| Substrate size | 4 inch wafer; 150 mm capable with advanced notice[2] | — |
| Substrate types | Silicon, Silicon Germanium, Quartz, Sapphire, Glass[2] | — |
| Wafer sizes | 100 mm default; 150 mm on request[3] | — |
| Alignment | Topside and backside alignment[3] | — |
| Reduction ratio | 5X for i-line models; 4X for DUV model[1] | — |
| Overlay accuracy | <= 40 nm (PAS 5500/275D), 90 nm (PAS 5500/60), <30 nm (PAS 5500/350C)[1] | — |
| Numerical aperture | 0.48 to 0.60 (PAS 5500/275D), 0.40 to 0.63 (PAS 5500/350C)[1] | — |
| Reticle size | 152.40 mm x 152.40 mm (PAS 5500/275D), 5 inch (PAS 5500/60), 6 inch square (PAS 5500/350C)[1] | — |
| Maximum field size | 22 mm x 22 mm or 27.4 mm x 14.7 mm (PAS 5500/275D), 18 mm x 22.4 mm (PAS 5500/60), 2.2 cm x 2.2 cm (PAS 5500/350C)[1] | — |
| Backside alignment | Available on PAS 5500/275D and PAS 5500/350C[1] | — |
| Wafer sizes supported | 75 mm, 100 mm, 150 mm, 200 mm (PAS 5500/275D); 100 mm default, 150 mm capable (PAS 5500/60); 100 mm default, 150 mm on request, also 4", 6", 8" (PAS 5500/350C)[1] | — |
| Reduction factor | 5X[1] | — |
| Maximum wafer size | 200 mm (8 in)[1] | — |
| Supported wafer diameters | 75 mm, 100 mm, 150 mm, 200 mm (i-line)[1] | — |
| Maximum die area (field) | 18 mm x 22.4 mm (i-line)[2] | — |
| Maximum image field | 22 mm x 27 mm usable (DUV)[4] | — |
| Type | High throughput i-line stepper[1] | — |
| Exposure method | Step and repeat[1] | — |
| Maximum supported substrate diameter | 200 mm[1] | — |
| Reticle thicknesses supported | 3.05 mm, 3.81 mm, 6.35 mm[1] | — |
| Supported sample sizes | 75 mm, 100 mm, 150 mm, and 200 mm wafer diameters[1] | — |
| Substrate thickness | 1 mm maximum[1] | — |
| Generation | i-line[1] | — |
| Minimum feature size | 450 nm[2] | — |
| Alignment between lithographic layers | 90 nm[2] | — |
| Maximum die area per exposure | 18 mm by 22.4 mm[2] | — |
| Substrate sizes | 4 inch wafer[2] | — |
| Reduction imaging | 5:1 reducing stepper[2] | — |
| Light source | KrF laser source[3] | — |
| Production span | Produced until 2010[3] | — |
| Exposure mode | step and repeat[1] | — |
| Default wafer diameter | 100 mm[2] | — |
| Exposure wavelength (PAS 5500/275D & PAS 5500/60) | 365 nm (i-line)[1] | — |
| Exposure wavelength (PAS 5500/350C) | 248 nm (DUV KrF)[3] | — |
| Resolution (PAS 5500/275D) | 280 nm[1] | — |
| Resolution (PAS 5500/60) | 450 nm[2] | — |
| Resolution (PAS 5500/350C) | <180 nm (single exposure)[3] | — |
| Overlay accuracy (PAS 5500/275D) | 40 nm[1] | — |
| Overlay accuracy (PAS 5500/60) | 90 nm[2] | — |
| Overlay accuracy (PAS 5500/350C) | <30 nm (topside alignment)[3] | — |
| Numerical aperture (PAS 5500/275D) | 0.48 to 0.60[1] | — |
| Numerical aperture (PAS 5500/350C) | 0.40 to 0.63 (conventional); up to 0.70 (tunable range)[3] | — |
| Reduction factor (PAS 5500/275D & PAS 5500/60) | 5X[1] | — |
| Reduction factor (PAS 5500/350C) | 4X[3] | — |
| Maximum field size (PAS 5500/275D) | 22 mm x 22 mm or 27.4 mm x 14.7 mm[1] | — |
| Maximum field size (PAS 5500/60) | 18 mm x 22.4 mm[2] | — |
| Maximum field size (PAS 5500/350C) | 2.2 cm x 2.2 cm (square)[3] | — |
| Throughput (PAS 5500/275D) | 84 wafers per hour[1] | — |
| Throughput (PAS 5500/350C) | >100 wafers per hour[3] | — |
| Reticle size (PAS 5500/275D) | 152.40 mm x 152.40 mm[1] | — |
| Reticle size (PAS 5500/60) | 5 inch[2] | — |
| Reticle size (PAS 5500/350C) | 6 inch square, 0.25 inch thick (standard)[3] | — |
| Supported wafer diameters (PAS 5500/275D) | 75 mm, 100 mm, 150 mm, 200 mm[1] | — |
| Supported wafer diameters (PAS 5500/60) | 100 mm (default), 150 mm (with advance notice)[2] | — |
| Supported wafer diameters (PAS 5500/350C) | 100 mm (default), 150 mm (on request)[3] | — |
| Projection mode | step and repeat[1] | — |
| Variant | PAS 5500/60 i-line stepper[2] | — |
| Variant exposure wavelength | 365 nm[2] | — |
| Variant minimum feature size | 450 nm[2] | — |
| Variant alignment between lithographic layers | 90 nm[2] | — |
| Variant maximum die area per exposure | 18 mm by 22.4 mm[2] | — |
| Variant substrate size | 4 inch wafer; 150 mm capable with advanced notice[2] | — |
| Variant mask size | 5 inch[2] | — |
| Variant reduction imaging | 5:1 reducing stepper[2] | — |
| Variant wafer cassette processing | automatic 100 mm wafer cassette processing capability[2] | — |
| Variant wafer diameter | 100 mm default[2] | — |
| Variant process wavelength | 248 nm[3] | — |
| Variant laser source | KrF laser[3] | — |
| Variant throughput | > 100 wafers/hour[3] | — |
| Variant wafer sizes | 100 mm default; 150 mm on request[3] | — |
| Variant first introduced | 2000[3] | — |
| Variant produced until | 2010[3] | — |
| Wafer size | — | up to 200 mm[7] |
| Automation level | — | Semi-automated[7] |
| Processes | — | Mask alignment, Bond alignment, Exposure, UV bonding, Fusion bonding, Micro- and Nanoimprinting, Selective plasma activation[7] |
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