Waferpedia

Comparison ledger

Centura DPS 2versus100 ICP Fluorine

Applied Materials Centura DPS 2, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura DPS 2Applied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura DPSOxford Instruments 100 ICP Fluorine
Cited variants
  • Centura DPS 2[1]
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Specifications
ConfigurationMetal 2ch / ASP 2ch[2]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu