Waferpedia

Comparison ledger

0720 06060 PartversusTS2000-IFE

Applied Materials 0720 06060 Part, MPI TS2000-IFE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0720 06060 PartApplied Materials
OEMApplied MaterialsMPI
CategoryTest & ProbeTest & Probe
Wafer size—200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0720 06060 PartMPI TS2000-IFE
Specifications
ConfigurationContact Pin 24-20 Awg Crimp Gold Flash[1]—
Base tool—MPI TS2000-IFE 200-mm automated probe station[2]
Precision—micron precision[2]
Probe types in standard configuration—two RF probes of GSG, GSSG or GSGSG types[2]
Included instruments—microscope and digital camera[2]
Thermal chuck temperature range—-60°C to +200 °C[2]
Motion/control—probes, microscope, and chuck are automatically controlled in x, y, and z directions with optical feedback[2]
RF VNA—Anritsu 4-Port ME7838G vector network analyzer capable of a single sweep from 70 kHz to 220 GHz[2]
DC bias supply—up to 12 DC bias can be supplied by an Agilent 4156C probe station precision semiconductor parameter analyzer capable of +/-200 V, 0.5 A, and 100 V/us pulses[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]cnf.cornell.educnf.cornell.edu