Comparison ledger
Applied Materials 0041-39086 ESC Part, Lam Research 4520 XL, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-39086 ESC PartApplied Materials | 4520 XLLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Lam Research Rainbow 4520 |
| Cited variants | — |
|
| Specifications | ||
| Software Version | — | E1.6.1-002[2] |
| Main UI (No PC Remote) | — | Pentium 33 NextStep[2] |
| Configuration | — | PC functions but fan needs changing[2] |
| Model | — | 4520 XL[2] |
| Manufacturer | — | Lam Research[2] |
| Category | — | Etch[3] |
| Wafer sizes | — | 8 inch[2] |
| Main UI | — | Pentium 33 NextStep[2] |
| PC status | — | PC functions but fan needs changing[2] |
| Process application | — | Contact etch, planarization, via etch, trench mask etch, pad etch[4] |
| Operating pressure | — | 30-200 mtorr[4] |
| Aspect ratio | — | 5:1 or greater[4] |
| Selectivity | — | ≥ 50:1 for contact and ≥ 30:1 for via etch[4] |
| BPSG etch rate | — | >8000 A/min[4] |
| TEOS etch rate | — | >6000 A/min[4] |
| Uniformity | — | +/- 7% 3σ[4] |
| Selectivity BPSG/TEOS to poly | — | > 30:1[4] |
| Particles | — | <0.06/cm2 at >0.3μm size[4] |
| Uptime | — | ≥ 85%[4] |
| MTTC | — | < 6 hours[4] |
| MTBF | — | ≥ 125 hours[4] |
| MTTR | — | ≤ 4 hours[4] |
| Feature | — | Multifrequency diode[4] |
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