Comparison ledger
Applied Materials 0010 47763, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Plasmalab 180 ICPOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Oxford Instruments Plasmalab |
| Specifications | ||
| Configuration | 2nd Source New[1] | For parts[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Process type | — | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[5] |
| System type | — | Load-locked plasma etching system with ICP source[5] |
| Operation | — | Fully automatic computer-controlled operation[5] |
| Maximum substrate size | — | 150 mm[5] |
| Configured substrate size | — | 100 mm wafers[5] |
| Wafer clamping | — | Mechanical clamping[5] |
| Backside cooling | — | Helium cooling[5] |
| Vacuum system | — | Alcatel turbo pump with controller and roughing pump[5] |
| Gas box | — | Six MFC gas controllers[5] |
| Previously used process gases | — | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[5] |
| Electrical rating | — | 208V, 3-phase, 50/60 Hz[5] |
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