Comparison ledger
Applied Materials 0010 47763, Lam Research 9600 TCP Metal, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 9600 TCP MetalLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research TCP 9600 |
| Specifications | ||
| Configuration | 2nd Source New[1] | with 3 HALO generators[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Plasma source | — | Transformer Coupled Plasma (TCP)[5] |
| Wafer size compatibility | — | 6-inch (150mm) and 8-inch (200mm)[5] |
| Chuck type | — | Ceramic ESC with helium backside cooling[5] |
| Endpoint control | — | Optical Emission Spectroscopy (OES)[5] |
| Automation interface | — | SECS/GEM Protocol[5] |
| Process chamber | — | Anodized aluminum, quartz-lined[5] |
| Typical etch targets | — | Al, TiN, Cu, W, Oxide, Nitride, Poly[5] |
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