Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, YES B2, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | B2YES |
|---|---|---|
| OEM | Applied Materials | YES |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 1998 Manual revision date |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | YES B2 |
| Cited variants | — | |
| Specifications | ||
| Make | Applied Materials[2] | — |
| Model | 0010-22161[2] | — |
| Description | HTESC PH 1 REV A[3] | — |
| Condition | Used[3] | — |
| Stock Number | BM6628[3] | — |
| Control computer | — | 80486-based PC[1] |
| Operating system | — | MS-DOS with Windows[1] |
| Process types | — | RIE, PE, PECVD, ICP, and ECR[1] |
| Primary Module vacuum connection | — | 100 mm, 160 mm (ICP), or 250 mm (ECR) diameter at the pump connection flange[1] |
| Process gas channels | — | Up to sixteen process gas channels under mass flow control, up to eight per chamber[1] |
| Endpoint detection | — | Emission spectroscopy and laser-based systems[1] |
| RF generator | — | 500 Watt solid-state 13.56 MHz generator; ICP systems also include an additional 1000 Watt limited solid-state 2 MHz RF generator[1] |