Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Samsung DDR4 DRAM Chips, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | DDR4 DRAM ChipsSamsung |
|---|---|---|
| OEM | Applied Materials | Samsung |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 2011– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Samsung DDR4 DRAM Chips |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Type | — | Synchronous dynamic random-access memory (SDRAM)[3] |
| Generation | — | 4th generation[3] |
| Release date | — | 2014[3] |
| Operating voltage | — | 1.2 V[3] |
| Maximum data transfer rate | — | 3,200 Mbps[4] |
| Bank groups | — | 4 bank groups (total 16 banks)[4] |
| System memory bandwidth | — | 1 TB/s[4] |
| Node process | — | 1x nm[4] |
| Prefetch buffer | — | 8n-prefetch architecture[3] |
| Clock rate | — | 800–1600 MHz[3] |
| Transfer rate range | — | 1600 MT/s to 3200 MT/s[3] |
| Bandwidth range | — | 12.8 GB/s to 25.6 GB/s[3] |
| Standard transfer rates | — | 1600, 1866, 2133, 2400, 2666, 2933, 3200 MT/s[3] |
| Internal banks | — | 16 (4 bank select bits)[3] |
| Ranks per DIMM | — | Up to 8[3] |
| ECC support | — | Optional[3] |