Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Hitachi CG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | CG5000Hitachi |
|---|---|---|
| OEM | Applied Materials | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2014 Date of manufacture |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Hitachi CG5000 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Date of Manufacture | — | 2014-05-01[3] |
| Currently Configured for | — | 300mm[3] |
| Tool current condition | — | Power on, not on production[3] |
| Process | — | Scanning Defect[3] |
| Software Version | — | 58.52[3] |
| System Power Rating | — | 208 AC 1 Phase[3] |
| Loading Configuration | — | 3 L/Ps[3] |
| Technology | — | CD-SEM[4] |
| Application | — | Applications for wafers[4] |
| Measurement characteristics | — | measurement, high-resolution, high-throughput[4] |
| Configured wafer size | — | 300mm[3] |
| Year(s) | — | 2014[3] |
| Year of Manufacture | — | 2014-05-01[3] |
| Wafer Size | — | 300mm[3] |
| Electron Beam Voltage (Postdevelop L/S CD) | — | 500 eV[5] |
| Electron Beam Voltage (Postetch LCDU) | — | 800 eV[5] |
| Technology Node | — | sub-22nm[4] |
| Measurement Type | — | CD-SEM[3] |
| Measurement type | — | critical-dimension (CD) measurement[3] |
| Performance | — | high-resolution, high-throughput, high-repeatability[4] |
| Calibration | — | enhanced automatic calibration[4] |