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Comparison ledger

0010-14300 Magnet AssyversusGSD 200 E 2 Ion

Applied Materials 0010-14300 Magnet Assy, Axcelis GSD 200 E 2 Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-14300 Magnet AssyApplied Materials
OEMApplied MaterialsAxcelis
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-14300 Magnet AssyAxcelis GSD 200
Specifications
ConfigurationP4 Magnet Assy, IMP[1]Software Version 6.12.3[2]
Gearbox P/N0010-27417[1]—
Part Number0010-14300[1]—
DescriptionP4 Magnet Assy, IMP[1]—
High Current—GSD-200EE[2]
Ion Source Type—ELS[2]
Source Material Type—Moly[2]
Single Stage Extraction—90keV[2]
Beamline Version—Standard[2]
Source Turbo Pump (P1)—STP H2000C[2]
Beam Line Cryo Pump (P3)—CTI Onboard 10[2]
End Station Cryo Pump (P2)—CTI Onboard 8[2]
Manufacturer—Axcelis[2]
Model—GSD 200 E 2[2]
Category—Ion Implantation[3]
Wafer size—6 inch[2]
Software version—6.12.3[2]
GEM/SECS interface—Present[2]
Cassette capability—4-cassette capability[2]
Automated beam tuning and set-up—w/Eaton Autotune[2]
Energy range—90KeV[2]
Beamline and source pumps—Beamline and Source Pumps[3]
Gas Type—MFC Type and Model[2]
Ar—UNIT 1662 10SCCM - SDS[2]
BF3—UNIT 1662 10SCCM - SDS[2]
AsH3—UNIT 1662 10SCCM - SDS[2]
PH3—UNIT 1660 10SCCM - SDS[2]
External Facilities Connections—Ar N2[2]
Cryo Compressors—CTI 9600 (1)[2]
Remote Disk Chiller—SMC-HRS050[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com