Waferpedia

Comparison ledger

0010-03254 E ChuckversusB2

Applied Materials 0010-03254 E Chuck, YES B2, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-03254 E ChuckApplied Materials
B2YES
OEMApplied MaterialsYES
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones—1998 Manual revision date
Control system——
Generation——
Family—YES B2
Cited variants—
Specifications
Control computer—80486-based PC[1]
Operating system—MS-DOS with Windows[1]
Process types—RIE, PE, PECVD, ICP, and ECR[1]
Primary Module vacuum connection—100 mm, 160 mm (ICP), or 250 mm (ECR) diameter at the pump connection flange[1]
Process gas channels—Up to sixteen process gas channels under mass flow control, up to eight per chamber[1]
Endpoint detection—Emission spectroscopy and laser-based systems[1]
RF generator—500 Watt solid-state 13.56 MHz generator; ICP systems also include an additional 1000 Watt limited solid-state 2 MHz RF generator[1]
Sources (1)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu