Comparison ledger
Alcatel AMS 200 SE, Applied Materials 0041-39086 ESC Part, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AMS 200 SEAlcatel | 0041-39086 ESC PartApplied Materials |
|---|---|---|
| OEM | Alcatel | Applied Materials |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Alcatel AMS 200 SE | — |
| Cited variants |
| — |
| Specifications | ||
| Equipment type | Optimized Deep Reactive Ion Etching (DRIE) system[1] | — |
| Materials stated | Silicon (Si) and Silicon on Insulator (SOI) wafers[1] | — |
| Plasma source | Inductive Coupled Plasma (ICP)[1] | — |
| Wafer cooling / clamping | Electrostatic Clamping Chuck (ESC) controlled in temperature for wafer cooling[1] | — |
| Endpoint detection | Laser interferometry through a top viewport[1] | — |
| GUI | Touch-screen Graphic User Interface (GUI)[1] | — |
| Maximum ICP RF power | 3 kW at 13.56 MHz[1] | — |
| Substrate holder height adjustment | 120 to 200 mm[1] | — |
| Substrate holder temperature range | -10 °C to +40 °C[1] | — |
| He backside pressure range | 3 to 15 mbar[1] | — |
| Wafer biasing modes | RF (13.56 MHz) for dielectric etching and pulsed Low Frequency (LF) for silicon etching[1] | — |
| Maximum substrate holder bias power | 600 W pulsed LF or 500 W RF[1] | — |
| Pumping | Adixen 1600 l/s turbo pump plus Adixen ADP122 rough pump[1] | — |
| Gas lines | 7 mass flow controllers and 6 gases: SF6, C4F8, CH4, O2, Ar, He[1] | — |
| Bosch process gases | SF6 and C4F8 can be used in pulsed mode[1] | — |
| Plasma source type | Inductively Coupled Plasma (ICP) with RF power at 13.56 MHz, maximum 3 kW[1] | — |
| Backside helium pressure range | 3 to 15 mbar[1] | — |
| Wafer biasing options | Pulsed LF (600 W max) or RF at 13.56 MHz (500 W max)[1] | — |
| Pump system | Adixen 1600 l/s turbo pump + Adixen ADP122 rough pump; base pressure few 10^-7 mbar[1] | — |
| Available gases and MFCs | SF6 (0-1000 sccm), C4F8 (0-400 sccm and 0-100 sccm), CH4, O2, Ar, He; 7 MFCs total[1] | — |
| End-point detection | Laser interferometry at 670 nm[1] | — |
| RF power | 13.56 MHz, 3 kW maximum[1] | — |
| Wafer biasing (RF) | 13.56 MHz, 500 W maximum[1] | — |
| Wafer biasing (pulsed LF) | 600 W maximum[1] | — |
| Helium backside pressure | 3 to 15 mbar[1] | — |
| Turbo pump | Adixen 1600 l/s[1] | — |
| Rough pump | Adixen ADP122[1] | — |
| Base pressure | few 10⁻⁷ mbar[1] | — |
| Number of mass flow controllers | 7 MFC for 6 gases[1] | — |
| Gas flow SF₆ | 0–1000 sccm (fast MFC)[1] | — |
| Gas flow C₄F₈ | 0–400 sccm (fast MFC) and 0–100 sccm[1] | — |
| Gas flow CH₄ | 0–100 sccm[1] | — |
| Gas flow O₂ | 0–100 sccm[1] | — |
| Gas flow Ar | 0–200 sccm[1] | — |
| Gas flow He | 0–200 sccm[1] | — |
| Tool type | Deep Reactive Ion Etching (DRIE) system[1] | — |
| Wafer biasing | RF (13.56 MHz, 500 W max) or pulsed low-frequency (LF, 600 W max)[1] | — |
| Substrate holder temperature | -10 °C to +40 °C[1] | — |
| Substrate holder height adjust | 120 mm to 200 mm[1] | — |
| ESC cooling method | Helium backside film, pressure 3–15 mb[1] | — |
| Pumping system | Adixen 1600 l/s turbo pump + Adixen ADP122 rough pump, base pressure few×10⁻⁷ mb[1] | — |
| End point detection | Laser interferometry at 670 nm with X/Y stage[1] | — |
| Loadlock transfer time | 40 s[1] | — |
| Maximum RF power on ICP | 3 kW[1] | — |
| Primary use | Silicon (Si) and silicon-on-insulator (SOI) wafers[1] | — |
| Load transfer time | 40 s from loadlock to processing chamber[1] | — |
| Substrate holder height range | 120 to 200 mm[1] | — |
| He backside pressure | 3 to 15 mbar[1] | — |
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