Comparison ledger
Aixtron AIX G 5 WW EPI Reactor, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AIX G 5 WW EPI ReactorAixtron | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron AIX | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Frequency | 60 Hz[1] | — |
| Configuration | 4 Wire + Ground[1] | High Efficiency HE RF Match-Bias[3] |
| Phase | 3 Phase[1] | — |
| Voltage | 208 V / 120 V AC[1] | — |
| OEM | Aixtron[1] | — |
| Model | AIX G 5 WW[1] | 0010-13622[3] |
| Tool type | Epitaxial silicon deposition system[2] | — |
| Wafer size | 4 inch[1] | — |
| Electrical configuration | 4 Wire + Ground[1] | — |
| Vintage | 2014 Vintage[1] | — |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[3] |
| Feature | — | High Efficiency HE RF Match-Bias[3] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →